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Oxford Instruments/ PlasmaPro 100 Cobra Mill 150
Inductively Coupled Plasma - Reactive Ion Etching (ICP-RIE)
The Inductively Coupled Plasma – Reactive Ion Etching (ICP-RIE) PlasmaPro 100 Cobra ICP Etch utilises high-density plasma to achieve fast etching and deposition rates. The process modules offer excellent uniformity, high-throughput, high-precision and low-damage processes for wafer sizes up to 200mm.
- Partner:Imperial College London
- Facility:Thin Film Technology Laboratory
- Availability:Available
Or call us now on 0161 275 8382
Detailed Description
ICP-RIE is a versatile and highly efficient plasma etching technique. Independent control of plasma density through the ICP source means high density plasmas can be realised without increasing DC bias on the lower electrode. High etch rates, increased selectivity to mask, improved ion directionality and low device damage are all realised using this technique. Robust auto matching across a wide parameter range means that processes are repeatable and reliable ensuring high performance every run, every day.