Reactive Ion Etching (RIE)

The Etchlab 200 features simple and fast sample loading from parts to 200 mm or 300 mm diameter wafer directly onto the electrode or on carrier. This technique can be used for etching various materials for top down fabrication of multilayer thin films or functional devices such as metals, semiconductors, dielectric materials or combinations. It also has the advantage of using multiple gases such as CF4, Argon, Oxygen and Nitrogen.