Wide Beam Ion Milling System

The scia Mill 150 is designed for highly uniform ion beam etching of single substrates up to 150 mm. The system is equipped with a circular broad beam ion source with a diameter of 218 mm. The source operates with inert gases (Ion Beam Etching) as well as with reactive gases (Reactive or Chemically Assisted Ion Beam Etching). The substrates will be mounted on a tiltable and rotatable substrate holder, which enables helium backside thermal contact for effective substrate cooling.

For faster processing and with stable process conditions a load lock system is installed, and samples of up to 150 mm in diameter are transferred automatically via the load lock into the process chamber.

A typical application is the nano- and micro structuring of complex multilayers of metallic and dielectric materials. An optical endpoint detection system is also integrated for the recognition of etched species and to apply a defined etch stop.